INTEGRATED CIRCUITS
DATA SHEET
TDA1561Q
2 × 23 W high efficiency car radio
power amplifier
1997 Aug 14
Preliminary specification
Supersedes data of 1997 Jun 11
File under Integrated Circuits, IC01
Philips Semiconductors
Preliminary specification
2 × 23 W high efficiency car radio power
amplifier
TDA1561Q
BLOCK DIAGRAM
V
P
7
MUTE
1
6
IN1
OUT1
5
OUT1
R
12
REFERENCE
SOURCES
MUTE/STANDBY
THERMAL/
SHORT-CIRCUIT
PROTECTION
HIGHER
TEMPERATURE
BTL DISABLE
CIN
1/2R
0.5V
11
P
C
11
3
MODE
9
8
OUT2
OUT2
2
HV
P
R
13
IN2
TDA1561Q
MUTE
4
10
MLD214
GND1
GND2
Fig.1 Block diagram.
1997 Aug 14
3
Philips Semiconductors
Preliminary specification
2 × 23 W high efficiency car radio power
amplifier
TDA1561Q
PINNING
SYMBOL
PIN
DESCRIPTION
IN1
1
2
input 1
handbook, halfpage
HVP
half supply voltage control input
mute/standby/operating/SE-only
ground 1
IN1
1
2
3
4
5
6
7
8
9
MODE
GND1
OUT1
OUT1
VP
3
HV
P
4
MODE
5
inverting output 1
GND1
6
non-inverting output 1
supply voltage
OUT1
OUT1
7
OUT2
OUT2
GND2
C11
8
inverting output 2
9
non-inverting output 2
ground 2
V
P
TDA1561Q
10
11
OUT2
OUT2
electrolytic capacitor for
single-ended (SE) mode
GND2 10
CIN
IN2
12
13
common input
input 2
C
11 11
CIN 12
IN2 13
MLD215
Fig.2 Pin configuration.
1997 Aug 14
4
Philips Semiconductors
Preliminary specification
2 × 23 W high efficiency car radio power
amplifier
TDA1561Q
The device is fully protected against short-circuiting of the
output pins to ground and to the supply voltage. It is also
protected against short-circuiting the loudspeaker and
high junction temperatures. In the event of a permanent
short-circuit condition to ground or the supply voltage, the
output stage will be switched off causing a low dissipation.
With permanent short-circuiting of the loudspeaker, the
output stage will be repeatedly switched on and off.
The duty cycle in the ‘on’ condition is low enough to
prevent excessive dissipation.
FUNCTIONAL DESCRIPTION
The TDA1561Q contains two identical amplifiers with
differential inputs. At low output power (up to output
amplitudes of 3 V (RMS) at VP = 14.4 V), the device
operates as a normal SE amplifier. When a larger output
voltage swing is needed, the circuit switches internally to
BTL operation.
With a sine wave input signal the dissipation of a
conventional BTL amplifier up to 2 W output power is more
than twice the dissipation of the TDA1561Q (see Fig.9).
To avoid plops during switching from ‘mute’ to ‘on’ or from
‘on’ to ‘mute/standby’ while an input signal is present, a
built-in zero-crossing detector allows only switching at
zero input voltage. However, when the supply voltage
drops below 6 V (e.g. engine start), the circuit mutes
immediately avoiding clicks coming from electronic
circuitry preceding the power amplifier.
In normal use, when the amplifier is driven with music-like
signals, the high (BTL) output power is only needed for a
small percentage of time. Under the assumption that a
music signal has a normal (Gaussian) amplitude
distribution, the dissipation of a conventional BTL amplifier
with the same output power is approximately 70% higher
(see Fig.10).
The voltage of the SE electrolytic capacitor (pin 11) is
always kept at 0.5VP by means of a voltage buffer (see
Fig.1). The value of this capacitor has an important
influence on the output power in SE mode, especially at
low signal frequencies, a high value is recommended to
minimize dissipation at low frequencies.
The heatsink has to be designed for use with music
signals. With such a heatsink, the thermal protection will
disable the BTL mode when the junction temperature
exceeds 145 °C. In this case the output power is limited to
5 W per amplifier.
The gain of each amplifier is internally fixed at 32 dB. With
the MODE pin, the device can be switched to the following
modes:
• Standby with low standby current (<50 µA)
• Mute condition, DC adjusted
• On, operation
• SE-only, operation (BTL disabled).
1997 Aug 14
5
Philips Semiconductors
Preliminary specification
2 × 23 W high efficiency car radio power
amplifier
TDA1561Q
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VP
PARAMETER
supply voltage
CONDITIONS
operating
MIN.
MAX.
18
UNIT
−
−
−
−
−
−
−
−
V
V
V
V
V
A
A
non operating
30
50
18
6
load dump; tr > 2.5 ms
VP(sc)
Vrp
short-circuit safe voltage
reverse polarity voltage
IOSM
IORM
Ptot
non-repetitive peak output current
repetitive peak output current
total power dissipation
6
4
60
+150
150
−
W
Tstg
Tvj
storage temperature
−55
−
−40
°C
°C
°C
virtual junction temperature
operating ambient temperature
Tamb
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
see note 1
VALUE
UNIT
K/W
K/W
Rth(j-c)
Rth(j-a)
thermal resistance from junction to case
thermal resistance from junction to ambient
1.3
40
Note
1. The value of Rth(c-h) depends on the application (see Fig.3).
1997 Aug 14
6
Philips Semiconductors
Preliminary specification
2 × 23 W high efficiency car radio power
amplifier
TDA1561Q
Heatsink design
There are two parameters that determine the size of the
virtual junction
OUT 1
handbook, halfpage
heatsink. The first is the rating for the virtual junction
temperature and the second is the ambient temperature at
which the amplifier must still deliver its full power in the
BTL mode.
OUT 1
OUT 2
OUT 2
3.6 K/W
3.6 K/W
3.6 K/W
3.6 K/W
With a conventional BTL amplifier, the maximum power
dissipation with a music-like signal (at each amplifier) will
be approximately two times 5 W. At a virtual junction
temperature of 150 °C and a maximum ambient
temperature of 60 °C, Rth(vj-c) = 1.3 K/W and
0.6 K/W
0.6 K/W
Rth(c-h) = 0.2 K/W, the thermal resistance of the heatsink
150 – 60
2 ×5
should be:
– 1.3 – 0.2 = 7.5 K/W
----------------------
MGC424
0.1 K/W
Compared to a conventional BTL amplifier, the TDA1561Q
has a higher efficiency. The thermal resistance of the
heatsink should be:
case
150 – 60
2 ×5
1.7
– 1.3 – 0.2 = 13.8 K/W
----------------------
Fig.3 Thermal equivalent resistance network.
1997 Aug 14
7
Philips Semiconductors
Preliminary specification
2 × 23 W high efficiency car radio power
amplifier
TDA1561Q
DC CHARACTERISTICS
VP = 14.4 V; Tamb = 25 °C; measured in Fig.6; unless otherwise specified.
SYMBOL
Supplies
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VP
Iq
supply voltage
note 1
6.0
14.4
18.0
V
quiescent current
standby current
RL = ∞
−
−
−
95
1
150
50
−
mA
µA
V
Istb
VC
average electrolytic capacitor
voltage at pin 11
7.1
∆VO
DC output offset voltage
on state
−
−
−
−
150
50
mV
mV
mute state
Mode select switch (see Fig.4)
Vms
voltage at mode select pin
(pin 3)
standby condition
0
2
4
−
−
−
−
−
1
V
mute condition
3
V
on condition (SE/BTL mode)
5.5
VP
40
V
on condition (SE mode only) 7.5
V
Ims
switch current through pin 3
BTL disable temperature
Vms = 5 V
−
−
µA
Protection
Tdis
145
−
°C
Note
1. The circuit is DC biased at VP = 6 to 18 V and AC operating at VP = 8 to 18 V.
V
handbook, halfpage
P
SE Only
8
7
6
5
4
3
2
1
SE/BTL
Mute
Standby
0
MLD216
Fig.4 Switching levels of mode select switch.
1997 Aug 14
8
Philips Semiconductors
Preliminary specification
2 × 23 W high efficiency car radio power
amplifier
TDA1561Q
AC CHARACTERISTICS
VP = 14.4 V; RL = 4 Ω; C11 = 1000 µF; f = 1 kHz; Tamb = 25 °C; measured in Fig.6; unless otherwise specified.
SYMBOL
PARAMETER
output power
CONDITIONS
THD = 1%
MIN.
15
TYP.
18
MAX. UNIT
Po
−
W
W
W
W
W
%
W
Hz
THD = 10%
21
−
−
−
−
23
36
14
20
0.1
−
−
−
−
−
EIAJ
VP = 13.2 V; THD = 0.5%
VP = 13.2 V; THD = 10%
Po = 1 W; f = 1 kHz; note 1
THD
Pd
total harmonic distortion
dissipated power
see Figs 9 and 10
Bp
power bandwidth
THD = 1%; Po = −1 dB
with respect to 15 W
−
20 to
15000
−
fro(l)
low frequency roll-off
−1 dB; note 2
−1 dB
−
130
31
25
−
−
−
Hz
fro(h)
Gv
high frequency roll-off
kHz
dB
closed loop voltage gain
supply voltage ripple rejection
32
33
SVRR
Rs = 0 Ω; Vripple = 2 V (p-p)
on; f = 1 kHz
45
60
90
−
80
60
1
−
−
−
−
75
−
−
100
300
−
dB
dB
dB
dB
kΩ
%
mute; f = 1 kHz
−
standby; f = 100 Hz to 10 kHz 80
CMRR
Zi
common mode rejection ratio
input impedance
Rs = 0 Ω; f = 1 kHz
−
45
−
−
−
−
−
−
40
−
∆Zi
VSE-BTL
Vout
mismatch in input impedance
SE to BTL switch voltage level
note 3
3
V
output voltage-mute (RMS value) Vi = 1 V (RMS)
50
160
170
20
60
−
µV
µV
µV
µV
dB
dB
Vn(o)
noise output voltage
on; Rs = 0 Ω; note 4
on; Rs = 10 kΩ; note 4
mute; note 5
−
−
αcs
∆Gv
channel separation
channel unbalance
Rs = 0 Ω
1
Notes
1. The distortion is measured with a bandwidth of 10 Hz to 30 kHz.
2. Frequency response externally fixed (input capacitors determine low frequency roll-off).
3. The SE to BTL switch voltage level depends on VP.
4. Noise output voltage measured with a bandwidth of 20 Hz to 20 kHz.
5. Noise output voltage is independent of Rs (see Fig.6)(Vi = 0 V).
1997 Aug 14
9
Philips Semiconductors
Preliminary specification
2 × 23 W high efficiency car radio power
amplifier
TDA1561Q
TEST AND APPLICATION INFORMATION
1000 µF
220 nF
16 V
V
7
MODE
3
P
R
s
1
IN1
220 nF
input 1
OUT1
6
5
10 nF
3.9 Ω
4 Ω
OUT1
100 nF
HV
P
2
3.9 Ω
C
11
9
11
0.5V
P
0.5R
s
1000 µF
12
CIN
470 nF
(16 V)
OUT2
OUT2
10
nF
100
nF
TDA1561Q
3.9 Ω
3.9 Ω
4 Ω
8
R
s
IN2
13
input 2
220 nF
4
10
GND2
GND1
MLD223
Fig.5 Test diagram.
10
1997 Aug 14
Philips Semiconductors
Preliminary specification
2 × 23 W high efficiency car radio power
amplifier
TDA1561Q
(1)
1000 µF
100 nF
16 V
V
7
MODE
P
3
R
s
IN1
220 nF
1
OUT1
6
5
10 nF
4 Ω
3.9 Ω
OUT1
100 nF
HV
2
P
100 nF
3.9 Ω
C
11
9
11
0.5R
s
12
CIN
0.5V
P
1000 µF
2 x 220 nF
(16 V)
OUT2
OUT2
10
nF
100
nF
TDA1561Q
4 Ω
3.9 Ω
3.9 Ω
8
R
s
13
IN2
220 nF
4
10
GND1
GND2
MLD213
signal ground
power ground
Connect Boucherot filter to pin 4 respectively pin 10 with the shortest possible connection.
Fig.6 Application diagram.
1997 Aug 14
11
Philips Semiconductors
Preliminary specification
2 × 23 W high efficiency car radio power
amplifier
TDA1561Q
86.36
43.18
gnd
GND
Vp
Mode
select
Cool Power
m
s
s
m
4 × 220 nF
Out 1
Out 2
In1
sgnd
In2
TDA1561Q
MGK182
Dimensions in mm.
Fig.7 PCB layout (component side) for the application of Fig.6.
12
1997 Aug 14
Philips Semiconductors
Preliminary specification
2 × 23 W high efficiency car radio power
amplifier
TDA1561Q
86.36
43.18
gnd
GND
Vp
Mode
m
s
s
m
Out2
Out1
In2
sgnd
In1
MGK183
Dimensions in mm.
Fig.8 PCB layout (soldering side) for the application of Fig.6.
13
1997 Aug 14
Philips Semiconductors
Preliminary specification
2 × 23 W high efficiency car radio power
amplifier
TDA1561Q
INTERNAL PIN CONFIGURATIONS
PIN
NAME
EQUIVALENT CIRCUIT
1,12,13 IN1, CIN, IN2
V
P
h
pin 12
pin 1
pin 13
MLD217
2
HVP
handbook, halfpage
MLD218
pin 2
3
MODE
V
handbook, halfpage
P
pin 3
MLD221
1997 Aug 14
14
Philips Semiconductors
Preliminary specification
2 × 23 W high efficiency car radio power
amplifier
TDA1561Q
PIN
5, 9
NAME
EQUIVALENT CIRCUIT
OUT1, OUT2
V
P
handbook, halfpage
pins 5, 9
MLD220
6, 8
OUT1, OUT2
V
handbook, halfpage
P
pins 6, 8
MLD219
11
C11
MLD222
pin 11
1997 Aug 14
15
Philips Semiconductors
Preliminary specification
2 × 23 W high efficiency car radio power
amplifier
TDA1561Q
ADDITIONAL APPLICATION INFORMATION
MBH692
MBH693
25
25
handbook, halfpage
handbook, halfpage
P
P
d
d
(W)
20
(W)
20
(1)
(2)
(1)
(2)
15
10
15
10
5
5
0
0
0
0
2
4
6
8
10
2
4
6
8
10
P
(W)
P
(W)
o
o
(1) For a conventional BTL amplifier.
(2) For TDA1561Q.
Input signal 1 kHz, sinusoidal; VP = 14.4 V.
(1) For a conventional BTL amplifier.
(2) For TDA1561Q.
Fig.10 Dissipation; pink noise through IEC-268
filter.
Fig.9 Dissipation; sine wave driven.
2.2 µF
2.2 µF
470 nF
430 Ω
330 Ω
91
nF
68
nF
3.3
kΩ
3.3
kΩ
10
kΩ
input
output
MGC428
Fig.11 IEC-268 filter.
1997 Aug 14
16
Philips Semiconductors
Preliminary specification
2 × 23 W high efficiency car radio power
amplifier
TDA1561Q
on condition
V
7
MODE
3
P
1
IN1
220 nF
OUT1
OUT1
6
5
10 nF
4 Ω
3.9 Ω
100 nF
HV
2
P
100 nF
3.9 Ω
C
11
9
11
IEC-268
FILTER
12
CIN
2×
220 nF
1/2V
P
1000 µF
(16 V)
pink
noise
OUT2
OUT2
10
nF
100
nF
TDA1561Q
4 Ω
3.9 Ω
3.9 Ω
8
220 nF
13
IN2
4
10
GND1
GND2
MGC427
Fig.12 Test and application diagram for dissipation measurements with a music-like signal (pink noise).
MBH694
MBH695
12
125
handbook, halfpage
handbook, halfpage
I
q
V
(mA)
100
O
(V)
8
75
50
25
4
0
0
0
0
8
16
24
8
16
24
V
(V)
V
(V)
P
P
Vms = 5 V.
Vms = 5 V; RI = ∞.
Fig.13 DC output voltage as a function of VP.
Fig.14 Quiescent current as a function of VP.
1997 Aug 14
17
Philips Semiconductors
Preliminary specification
2 × 23 W high efficiency car radio power
amplifier
TDA1561Q
MBH696
MBH697
160
80
handbook, halfpage
handbook, halfpage
I
MODE
(µA)
I
P
(mA)
64
120
48
80
SE/BTL
SE only
32
16
40
off
mute
0
0
0
0
2
4
6
V
8
(V)
2
4
6
V
8
(V)
MODE
MODE
VP = 14.4 V; Vin = 0 mV; RI = ∞.
Fig.15 IP as a function of Vms (pin 3).
Fig.16 Ims as a function of Vms.
MBH698
MBH699
2
10
60
handbook, halfpage
handbook, halfpage
THD + N
(%)
P
o
(W)
(1)
10
1
40
(2)
(3)
(1)
(2)
(3)
20
−1
10
−2
10
0
8.4
10
−2
−1
2
10
1
10
10
10.8
13.2
15.6
18
P
(W)
o
V
(V)
P
Both channels driven.
(1) EIAJ.
(1) f = 10 kHz.
(2) f = 1 kHz.
(3) f = 100 Hz.
(2) THD = 10%.
(3) THD = 1%.
Fig.17 Output power as a function of VP.
Fig.18 THD + noise as a function of Po.
1997 Aug 14
18
Philips Semiconductors
Preliminary specification
2 × 23 W high efficiency car radio power
amplifier
TDA1561Q
MBH700
MBH701
10
20
handbook, halfpage
handbook, halfpage
B
p
(W)
18
THD + N
(%)
(1)
(2)
1
16
14
12
(1)
(2)
−1
10
−2
10
10
10
10
2
3
4
5
2
3
4
5
10
10
10
10
10
10
10
10
f (Hz)
f (Hz)
(1) Po = 10 W.
(2) Po = 1 W.
(1) For OUT2.
(2) For OUT1.
Fig.19 THD + noise as a function of frequency.
Fig.20 Power bandwidth at THD = 1%.
MBH702
MBH703
−20
36
handbook, halfpage
handbook, halfpage
SVRR
G
v
(dB)
34
(dB)
on
−40
32
30
28
26
−60
−80
mute
off
−100
−120
2
3
4
5
6
2
3
4
5
10
10
10
10
10
10
10
10
10
10
10
f (Hz)
f (Hz)
Vin = 50 mV.
Vripple(p-p) = 2 V.
Fig.21 Gain as a function of frequency.
Fig.22 SVRR as a function of frequency.
1997 Aug 14
19
Philips Semiconductors
Preliminary specification
2 × 23 W high efficiency car radio power
amplifier
TDA1561Q
MBH704
0
handbook, halfpage
α
cs
(dB)
−20
−40
handbook, halfpage
10 kΩ
5 V/40 µA
MODE
(1)
(2)
47 µF
−60
MBH690
−100
2
3
4
5
10
10
10
10
10
f (Hz)
(1) Po = 1 W.
(2) Po = 10 W.
Fig.23 Channel separation as a function of
frequency.
Fig.24 Mode select circuit.
1997 Aug 14
20
Philips Semiconductors
Preliminary specification
2 × 23 W high efficiency car radio power
amplifier
TDA1561Q
(1)
(2)
(3)
MBH691
V
P
0
V
load
−V
P
P
V
V
master
1/2 V
P
0
V
P
V
slave
1/2 V
P
0
0
1
2
t (ms)
3
See Fig.5:
Vload = V6 −V5 or V8 − V9
Vmaster = V6 or V8
Vslave = V5 or V9
Fig.25 Output waveforms.
21
1997 Aug 14
Philips Semiconductors
Preliminary specification
2 × 23 W high efficiency car radio power
amplifier
TDA1561Q
PACKAGE OUTLINE
DBS13P: plastic DIL-bent-SIL power package; 13 leads (lead length 12 mm)
SOT141-6
non-concave
x
D
h
D
E
h
view B: mounting base side
d
A
2
B
j
E
A
L
3
L
Q
c
2
v
M
1
13
e
e
m
w
M
1
Z
b
p
e
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
(1)
(1)
(1)
UNIT
A
A
b
c
D
d
D
E
e
e
e
E
j
L
L
3
m
Q
v
w
x
Z
2
p
h
1
2
h
17.0 4.6 0.75 0.48 24.0 20.0
15.5 4.2 0.60 0.38 23.6 19.6
12.2
11.8
3.4 12.4 2.4
3.1 11.0 1.6
2.00
1.45
2.1
1.8
6
mm
10
3.4
1.7 5.08
0.8
4.3
0.25 0.03
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
EIAJ
95-03-11
97-12-16
SOT141-6
1997 Aug 14
22
Philips Semiconductors
Preliminary specification
2 × 23 W high efficiency car radio power
amplifier
TDA1561Q
The device may be mounted up to the seating plane, but
the temperature of the plastic body must not exceed the
specified maximum storage temperature (Tstg max). If the
printed-circuit board has been pre-heated, forced cooling
may be necessary immediately after soldering to keep the
temperature within the permissible limit.
SOLDERING
Introduction
There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.
Repairing soldered joints
Apply a low voltage soldering iron (less than 24 V) to the
lead(s) of the package, below the seating plane or not
more than 2 mm above it. If the temperature of the
soldering iron bit is less than 300 °C it may remain in
contact for up to 10 seconds. If the bit temperature is
between 300 and 400 °C, contact may be up to 5 seconds.
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our “IC Package Databook” (order code 9398 652 90011).
Soldering by dipping or by wave
The maximum permissible temperature of the solder is
260 °C; solder at this temperature must not be in contact
with the joint for more than 5 seconds. The total contact
time of successive solder waves must not exceed
5 seconds.
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Aug 14
23
Philips Semiconductors – a worldwide company
Argentina: see South America
Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,
Tel. +31 40 27 82785, Fax. +31 40 27 88399
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Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 160 1010,
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Norway: Box 1, Manglerud 0612, OSLO,
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Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,
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Philippines: Philips Semiconductors Philippines Inc.,
106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474
Belgium: see The Netherlands
Brazil: see South America
Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,
Tel. +48 22 612 2831, Fax. +48 22 612 2327
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,
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Tel. +359 2 689 211, Fax. +359 2 689 102
Portugal: see Spain
Romania: see Italy
Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
Tel. +1 800 234 7381
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,
Tel. +7 095 755 6918, Fax. +7 095 755 6919
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Colombia: see South America
Slovakia: see Austria
Czech Republic: see Austria
Slovenia: see Italy
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Tel. +45 32 88 2636, Fax. +45 31 57 0044
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Spain: Balmes 22, 08007 BARCELONA,
Tel. +34 3 301 6312, Fax. +34 3 301 4107
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Tel. +49 40 23 53 60, Fax. +49 40 23 536 300
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Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS,
Tel. +30 1 4894 339/239, Fax. +30 1 4814 240
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. +41 1 488 2686, Fax. +41 1 481 7730
Hungary: see Austria
India: Philips INDIA Ltd, Band Box Building, 2nd floor,
254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,
Tel. +91 22 493 8541, Fax. +91 22 493 0966
Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. +66 2 745 4090, Fax. +66 2 398 0793
Indonesia: see Singapore
Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. +353 1 7640 000, Fax. +353 1 7640 200
Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,
Tel. +90 212 279 2770, Fax. +90 212 282 6707
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,
TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,
20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108,
Tel. +81 3 3740 5130, Fax. +81 3 3740 5077
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
Tel. +82 2 709 1412, Fax. +82 2 709 1415
Uruguay: see South America
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. +60 3 750 5214, Fax. +60 3 757 4880
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 625 344, Fax.+381 11 635 777
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. +9-5 800 234 7381
Middle East: see Italy
For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications,
Internet: http://www.semiconductors.philips.com
Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
© Philips Electronics N.V. 1997
SCA55
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
547027/1200/05/pp24
Date of release: 1997 Aug 14
Document order number: 9397 750 02732
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